{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8507950","patent":{"patent_number":"US-8507950","title":"Method of producing semiconductor wafer and semiconductor wafer","assignee":null,"inventors":[],"filing_date":"2011-07-26T00:00:00.000Z","publication_date":"2013-08-13T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":12,"abstract":"A method of producing a semiconductor wafer includes placing a base wafer within a reaction chamber, and epitaxially growing a p-type Group 3-5 compound semiconductor on the base wafer by supplying, into the reaction chamber, a Group 3 source gas consisting of an organometallic compound of a Group 3 element, a Group 5 source gas consisting of a compound of a Group 5 element, and an impurity gas including an impurity that is to be incorporated as a dopant into a semiconductor to serve as a donor. Here, during the epitaxial growth of the p-type Group 3-5 compound semiconductor, the flow rate of the impurity gas and the flow rate ratio of the Group 5 source gas to the Group 3 source gas are set so that the product N×d (cm−2) of the residual carrier concentration N (cm−3) and the thickness d (cm) of the p-type Group 3-5 compound semiconductor may be 8.0×1011 or less."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of producing semiconductor wafer and semiconductor wafer","description":"A method of producing a semiconductor wafer includes placing a base wafer within a reaction chamber, and epitaxially growing a p-type Group 3-5 compound semiconductor on the base wafer by supplying, i","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8507950","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8507950","citation_suggestion":"Patentable. \"Method of producing semiconductor wafer and semiconductor wafer\" (US-8507950). https://patentable.app/patents/US-8507950","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8507950","json":"https://patentable.app/api/llm-context/US-8507950","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T20:58:04.976Z"}