{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8507965","patent":{"patent_number":"US-8507965","title":"Semiconductor device and manufacturing method thereof","assignee":null,"inventors":[],"filing_date":"2010-10-01T00:00:00.000Z","publication_date":"2013-08-13T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":5,"abstract":"An insulation film (24) having a gradual inclination of a surface is formed by a high density plasma CVD method, an atmospheric pressure CVD method or the like, after a ferroelectric capacitor (23) is formed. Thereafter, an alumina film (25) is formed on the insulation film (24). According to the method, low coverage of the alumina film (25) does not become a problem, and the ferroelectric capacitor (23) is reliably protected."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device and manufacturing method thereof","description":"An insulation film (24) having a gradual inclination of a surface is formed by a high density plasma CVD method, an atmospheric pressure CVD method or the like, after a ferroelectric capacitor (23) is","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8507965","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8507965","citation_suggestion":"Patentable. \"Semiconductor device and manufacturing method thereof\" (US-8507965). https://patentable.app/patents/US-8507965","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8507965","json":"https://patentable.app/api/llm-context/US-8507965","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T20:43:00.740Z"}