{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8507975","patent":{"patent_number":"US-8507975","title":"Semiconductor integrated circuit device and a method of manufacturing the same","assignee":null,"inventors":[],"filing_date":"2012-06-25T00:00:00.000Z","publication_date":"2013-08-13T00:00:00.000Z","cpc_codes":["B82Y","G11C","G11C","G11C","G11C","H01L","G11C","H01L"],"num_claims":7,"abstract":"A semiconductor device having plural memory cell regions featuring nonvolatile memory cells, each nonvolatile memory cell including a first insulating film formed over a semiconductor substrate, a control electrode formed over the first insulating film, the first insulating film acting as a gate insulator for the control gate electrode, a second insulating film formed over the semiconductor substrate, and a memory gate electrode formed over the second insulating film and arranged adjacent with the control gate electrode through the second gate insulating film, the second insulating film acting as a gate insulator for the memory gate electrode and featuring a non-conductive charge trap film, wherein each of the nonvolatile memory cells of a first memory cell region and each of the nonvolatile memory cells of a second memory cell region are formed adjacent to one another such that a drain region is shared between them."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor integrated circuit device and a method of manufacturing the same","description":"A semiconductor device having plural memory cell regions featuring nonvolatile memory cells, each nonvolatile memory cell including a first insulating film formed over a semiconductor substrate, a con","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8507975","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8507975","citation_suggestion":"Patentable. \"Semiconductor integrated circuit device and a method of manufacturing the same\" (US-8507975). https://patentable.app/patents/US-8507975","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8507975","json":"https://patentable.app/api/llm-context/US-8507975","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T14:07:13.348Z"}