{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8507985","patent":{"patent_number":"US-8507985","title":"Semiconductor device","assignee":null,"inventors":[],"filing_date":"2011-03-18T00:00:00.000Z","publication_date":"2013-08-13T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":20,"abstract":"According to one embodiment, a semiconductor device, includes a semiconductor layer, a first base region of a first conductivity type, a first source region of a second conductivity type, a second base region of the first conductivity type, a back gate region of the first conductivity type, a drift region of the second conductivity type, a drain region of the second conductivity type, a first insulating region, a second insulating region, a gate oxide film, a first gate electrode, a second gate electrode, a first main electrode and a second main electrode. These constituent elements are provided on the surface of the semiconductor layer. The distance between the first base region and the first insulating region is not more than 1.8 μm. The distance between the first base region and the first insulating region is shorter than a distance between the second base region and the second insulating region."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device","description":"According to one embodiment, a semiconductor device, includes a semiconductor layer, a first base region of a first conductivity type, a first source region of a second conductivity type, a second bas","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8507985","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8507985","citation_suggestion":"Patentable. \"Semiconductor device\" (US-8507985). https://patentable.app/patents/US-8507985","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8507985","json":"https://patentable.app/api/llm-context/US-8507985","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T16:55:22.619Z"}