{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8507993","patent":{"patent_number":"US-8507993","title":"Buried layer of an integrated circuit","assignee":null,"inventors":[],"filing_date":"2012-08-28T00:00:00.000Z","publication_date":"2013-08-13T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":18,"abstract":"Various aspects of the technology are directed to integrated circuit manufacturing methods and integrated circuits. In one method, a first charge type buried layer in a semiconductor material of an integrated circuit by implanting first charge type dopants of the first charge type buried layer through a sacrificial oxide over the semiconductor material and through an intermediate region of the semiconductor material transited by the implanted first charge type dopants. When the implanted dopants pass through the sacrificial oxide, damage to the semiconductor crystalline lattice is averted. If the sacrificial oxide were absent, the implanted dopants would have passed through and damaged the semiconductor crystalline lattice instead. Later, a pre-anneal oxide is grown and removed."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Buried layer of an integrated circuit","description":"Various aspects of the technology are directed to integrated circuit manufacturing methods and integrated circuits. In one method, a first charge type buried layer in a semiconductor material of an in","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8507993","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8507993","citation_suggestion":"Patentable. \"Buried layer of an integrated circuit\" (US-8507993). https://patentable.app/patents/US-8507993","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8507993","json":"https://patentable.app/api/llm-context/US-8507993","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T01:53:27.970Z"}