{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8508970","patent":{"patent_number":"US-8508970","title":"Techniques for providing a direct injection semiconductor memory device","assignee":null,"inventors":[],"filing_date":"2010-04-27T00:00:00.000Z","publication_date":"2013-08-13T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C"],"num_claims":20,"abstract":"Techniques for providing a direct injection semiconductor memory device are disclosed. In one particular exemplary embodiment, the techniques may be realized as a method for biasing a direct injection semiconductor memory device. The method may comprise applying a first voltage potential to a first N-doped region via a bit line and applying a second voltage potential to a second N-doped region via a source line. The method may also comprise applying a third voltage potential to a word line, wherein the word line is spaced apart from and capacitively coupled to a body region that is electrically floating and disposed between the first N-doped region and the second N-doped region. The method may further comprise applying a fourth voltage potential to a P-type substrate via a carrier injection line."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Techniques for providing a direct injection semiconductor memory device","description":"Techniques for providing a direct injection semiconductor memory device are disclosed. In one particular exemplary embodiment, the techniques may be realized as a method for biasing a direct injection","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8508970","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8508970","citation_suggestion":"Patentable. \"Techniques for providing a direct injection semiconductor memory device\" (US-8508970). https://patentable.app/patents/US-8508970","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8508970","json":"https://patentable.app/api/llm-context/US-8508970","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T10:35:55.976Z"}