{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8508983","patent":{"patent_number":"US-8508983","title":"Nonvolatile static random access memory cell and memory circuit","assignee":null,"inventors":[],"filing_date":"2011-09-13T00:00:00.000Z","publication_date":"2013-08-13T00:00:00.000Z","cpc_codes":["G11C"],"num_claims":16,"abstract":"A non-volatile static random access memory (NVSRAM) cell including a static random access circuit, first storage device, a second storage device, and a switch unit is provided. The static random access circuit has a first terminal and a second terminal respectively having a first voltage and a second voltage. Stored data in the first storage device and the second storage device are determined by the first voltage and the second voltage. The first storage device and the second storage device respectively have a first connection terminal and a second connection terminal. The switch unit is respectively coupled to the second connection terminals of the first storage device and the second storage device, and is controlled by a switching signal of a switch line to conduct the first storage device and the second storage device to a same bit line or a same complementary bit line."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Nonvolatile static random access memory cell and memory circuit","description":"A non-volatile static random access memory (NVSRAM) cell including a static random access circuit, first storage device, a second storage device, and a switch unit is provided. The static random acces","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8508983","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8508983","citation_suggestion":"Patentable. \"Nonvolatile static random access memory cell and memory circuit\" (US-8508983). https://patentable.app/patents/US-8508983","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8508983","json":"https://patentable.app/api/llm-context/US-8508983","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T14:09:43.324Z"}