{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8508984","patent":{"patent_number":"US-8508984","title":"Low resistance high-TMR magnetic tunnel junction and process for fabrication thereof","assignee":null,"inventors":[],"filing_date":"2008-02-29T00:00:00.000Z","publication_date":"2013-08-13T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C"],"num_claims":25,"abstract":"A non-volatile magnetic memory element includes a fixed layer, a barrier layer formed on top of the fixed layer, and a free layer formed on top of the barrier layer, wherein the electrical resistivity of the barrier layer is reduced by placing said barrier layer under compressive stress. Compressive stress is induced by either using a compressive stress inducing layer, or by using inert gases at low pressure during the sputtering process as the barrier layer is deposited, or by introducing compressive stress inducing molecules into the molecular lattice of the barrier layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Low resistance high-TMR magnetic tunnel junction and process for fabrication thereof","description":"A non-volatile magnetic memory element includes a fixed layer, a barrier layer formed on top of the fixed layer, and a free layer formed on top of the barrier layer, wherein the electrical resistivity","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8508984","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8508984","citation_suggestion":"Patentable. \"Low resistance high-TMR magnetic tunnel junction and process for fabrication thereof\" (US-8508984). https://patentable.app/patents/US-8508984","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8508984","json":"https://patentable.app/api/llm-context/US-8508984","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T10:34:34.942Z"}