{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8513056","patent":{"patent_number":"US-8513056","title":"Semiconductor memory device and method of fabricating the same","assignee":null,"inventors":[],"filing_date":"2010-02-26T00:00:00.000Z","publication_date":"2013-08-20T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L"],"num_claims":12,"abstract":"Provided is a semiconductor device and method of fabricating the semiconductor memory device. The semiconductor device may be formed by forming a first welding groove along outside edges of one case of a pair of upper and lower cases, forming a first welding protrusion along outside edges of the other case, the first welding protrusion being formed to correspond to the first welding groove and having a volume larger than a volume of the first welding groove. The method may further include inserting the first welding protrusion into the first welding groove to enclose a memory module in an inner accommodating space of the upper and lower cases, melting the first welding protrusion so that a first portion of the first welding protrusion fills the first welding groove and a second portion of the first welding protrusion fills a space between welding portions of the upper case and the lower case, and solidifying the first and second portions of the first welding protrusion."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor memory device and method of fabricating the same","description":"Provided is a semiconductor device and method of fabricating the semiconductor memory device. The semiconductor device may be formed by forming a first welding groove along outside edges of one case o","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8513056","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8513056","citation_suggestion":"Patentable. \"Semiconductor memory device and method of fabricating the same\" (US-8513056). https://patentable.app/patents/US-8513056","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8513056","json":"https://patentable.app/api/llm-context/US-8513056","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T17:19:24.081Z"}