{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8513081","patent":{"patent_number":"US-8513081","title":"Carbon implant for workfunction adjustment in replacement gate transistor","assignee":null,"inventors":[],"filing_date":"2011-10-13T00:00:00.000Z","publication_date":"2013-08-20T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":19,"abstract":"A method includes providing a wafer that has a semiconductor layer having an insulator layer disposed on the semiconductor layer. The insulator layer has openings made therein to expose a surface of the semiconductor layer, where each opening corresponds to a location of what will become a transistor channel in the semiconductor layer disposed beneath a gate stack. The method further includes depositing a high dielectric constant gate insulator layer so as to cover the exposed surface of the semiconductor layer and sidewalls of the insulator layer; depositing a gate metal layer that overlies the high dielectric constant gate insulator layer; and implanting Carbon through the gate metal layer and the underlying high dielectric constant gate insulator layer so as to form in an upper portion of the semiconductor layer a Carbon-implanted region having a concentration of Carbon selected to establish a voltage threshold of the transistor."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Carbon implant for workfunction adjustment in replacement gate transistor","description":"A method includes providing a wafer that has a semiconductor layer having an insulator layer disposed on the semiconductor layer. The insulator layer has openings made therein to expose a surface of t","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8513081","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8513081","citation_suggestion":"Patentable. \"Carbon implant for workfunction adjustment in replacement gate transistor\" (US-8513081). https://patentable.app/patents/US-8513081","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8513081","json":"https://patentable.app/api/llm-context/US-8513081","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T19:44:50.518Z"}