{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8513085","patent":{"patent_number":"US-8513085","title":"Structure and method to improve threshold voltage of MOSFETs including a high k dielectric","assignee":null,"inventors":[],"filing_date":"2012-03-01T00:00:00.000Z","publication_date":"2013-08-20T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":20,"abstract":"Threshold voltage controlled semiconductor structures are provided in which a conformal nitride-containing liner is located on at least exposed sidewalls of a patterned gate dielectric material having a dielectric constant of greater than silicon oxide. The conformal nitride-containing liner is a thin layer that is formed using a low temperature (less than 500° C.) nitridation process."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Structure and method to improve threshold voltage of MOSFETs including a high k dielectric","description":"Threshold voltage controlled semiconductor structures are provided in which a conformal nitride-containing liner is located on at least exposed sidewalls of a patterned gate dielectric material having","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8513085","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8513085","citation_suggestion":"Patentable. \"Structure and method to improve threshold voltage of MOSFETs including a high k dielectric\" (US-8513085). https://patentable.app/patents/US-8513085","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8513085","json":"https://patentable.app/api/llm-context/US-8513085","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T14:37:40.410Z"}