{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8513109","patent":{"patent_number":"US-8513109","title":"Method of manufacturing an interconnect structure for a semiconductor device","assignee":null,"inventors":[],"filing_date":"2011-03-21T00:00:00.000Z","publication_date":"2013-08-20T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":16,"abstract":"A method of manufacturing an interconnect structure for a semiconductor device having a device substrate is provided. The semiconductor device includes an electrically-conductive pad formed overlying the device substrate and an electrically-conductive platform formed overlying the electrically-conductive pad and enclosing a cavity. The electrically-conductive platform has a perimeter portion extending away from the electrically-conductive pad and a capping portion atop the perimeter portion. The semiconductor device also includes a cushioning material disposed in the cavity."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of manufacturing an interconnect structure for a semiconductor device","description":"A method of manufacturing an interconnect structure for a semiconductor device having a device substrate is provided. The semiconductor device includes an electrically-conductive pad formed overlying ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8513109","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8513109","citation_suggestion":"Patentable. \"Method of manufacturing an interconnect structure for a semiconductor device\" (US-8513109). https://patentable.app/patents/US-8513109","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8513109","json":"https://patentable.app/api/llm-context/US-8513109","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T22:14:21.785Z"}