{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8513114","patent":{"patent_number":"US-8513114","title":"Method for forming a dual damascene interconnect structure","assignee":null,"inventors":[],"filing_date":"2012-03-20T00:00:00.000Z","publication_date":"2013-08-20T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L"],"num_claims":16,"abstract":"An improved method of forming a semiconductor device including an interconnect layer formed using multilayer hard mask comprising metal mask and dielectric mask is provided. To form the second opening pattern being aligned to the first pattern, after the multilayer hard mask is used at the first step, then the dielectric mask is used to form a damascene structure in an insulator layer at the second step followed by removing the metal mask."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for forming a dual damascene interconnect structure","description":"An improved method of forming a semiconductor device including an interconnect layer formed using multilayer hard mask comprising metal mask and dielectric mask is provided. To form the second opening","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8513114","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8513114","citation_suggestion":"Patentable. \"Method for forming a dual damascene interconnect structure\" (US-8513114). https://patentable.app/patents/US-8513114","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8513114","json":"https://patentable.app/api/llm-context/US-8513114","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T09:36:18.838Z"}