{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8513119","patent":{"patent_number":"US-8513119","title":"Method of forming bump structure having tapered sidewalls for stacked dies","assignee":null,"inventors":[],"filing_date":"2008-12-10T00:00:00.000Z","publication_date":"2013-08-20T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":12,"abstract":"A bump structure that may be used for stacked die configurations is provided. Through-silicon vias are formed in a semiconductor substrate. A backside of the semiconductor substrate is thinned to expose the through-silicon vias. An isolation film is formed over the backside of the semiconductor substrate and the exposed portion of the through-silicon vias. The isolation film is thinned to re-expose the through-silicon vias. Bump pads and redistribution lines are formed on the backside of the semiconductor substrate providing an electrical connection to the through-silicon vias. Another isolation film is deposited and patterned, and a barrier layer is formed to provide contact pads for connecting to an external device, e.g., another die/wafer or circuit board."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of forming bump structure having tapered sidewalls for stacked dies","description":"A bump structure that may be used for stacked die configurations is provided. Through-silicon vias are formed in a semiconductor substrate. A backside of the semiconductor substrate is thinned to expo","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8513119","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8513119","citation_suggestion":"Patentable. \"Method of forming bump structure having tapered sidewalls for stacked dies\" (US-8513119). https://patentable.app/patents/US-8513119","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8513119","json":"https://patentable.app/api/llm-context/US-8513119","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T17:09:28.257Z"}