{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8513131","patent":{"patent_number":"US-8513131","title":"Fin field effect transistor with variable channel thickness for threshold voltage tuning","assignee":null,"inventors":[],"filing_date":"2011-03-17T00:00:00.000Z","publication_date":"2013-08-20T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":14,"abstract":"A method of forming an integrated circuit (IC) includes forming a first and second plurality of spacers on a substrate, wherein the substrate includes a silicon layer, and wherein the first plurality of spacers have a thickness that is different from a thickness of the second plurality of spacers; and etching the silicon layer in the substrate using the first and second plurality of spacers as a mask, wherein the etched silicon layer forms a first plurality and a second plurality of fin field effect transistor (FINFET) channel regions, and wherein the first plurality of FINFET channel regions each have a respective thickness that corresponds to the thickness of the first plurality of spacers, and wherein the second plurality of FINFET channel regions each have a respective thickness that corresponds to the thickness of the second plurality of spacers."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Fin field effect transistor with variable channel thickness for threshold voltage tuning","description":"A method of forming an integrated circuit (IC) includes forming a first and second plurality of spacers on a substrate, wherein the substrate includes a silicon layer, and wherein the first plurality ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8513131","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8513131","citation_suggestion":"Patentable. \"Fin field effect transistor with variable channel thickness for threshold voltage tuning\" (US-8513131). https://patentable.app/patents/US-8513131","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8513131","json":"https://patentable.app/api/llm-context/US-8513131","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T16:55:34.572Z"}