{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8513132","patent":{"patent_number":"US-8513132","title":"Method for fabricating metal pattern in semiconductor device","assignee":null,"inventors":[],"filing_date":"2011-12-13T00:00:00.000Z","publication_date":"2013-08-20T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L"],"num_claims":17,"abstract":"A method for fabricating a metal pattern in a semiconductor device includes forming a metal layer over a substrate, forming a hard mask layer over the metal layer, forming a sacrifice pattern over the hard mask layer, forming a spacer pattern on sidewalks of the sacrifice pattern, removing the sacrifice pattern, forming a hard mask pattern by etching the hard mask layer using the spacer pattern as an etch barrier, forming an etching protection layer over the hard mask pattern and on sidewalks of the hard mask pattern, and forming the metal pattern by performing primary and secondary etching processes on the metal layer using the etching protection layer as an etch barrier."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for fabricating metal pattern in semiconductor device","description":"A method for fabricating a metal pattern in a semiconductor device includes forming a metal layer over a substrate, forming a hard mask layer over the metal layer, forming a sacrifice pattern over the","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8513132","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8513132","citation_suggestion":"Patentable. \"Method for fabricating metal pattern in semiconductor device\" (US-8513132). https://patentable.app/patents/US-8513132","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8513132","json":"https://patentable.app/api/llm-context/US-8513132","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T00:36:32.474Z"}