{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8513637","patent":{"patent_number":"US-8513637","title":"4F2 self align fin bottom electrodes FET drive phase change memory","assignee":null,"inventors":[],"filing_date":"2007-07-13T00:00:00.000Z","publication_date":"2013-08-20T00:00:00.000Z","cpc_codes":["G11C","G11C"],"num_claims":35,"abstract":"Arrays of memory cells are described along with devices thereof and method for manufacturing. Memory cells described herein include memory elements comprising programmable resistive material and self-aligned bottom electrodes. In preferred embodiments the area of the memory cell is 4F2, F being the feature size for a lithographic process used to manufacture the memory cell, and more preferably F being equal to a minimum feature size. Arrays of memory cells described herein include memory cells arranged in a cross point array, the array having a plurality of word lines and source lines arranged in parallel in a first direction and having a plurality of bit lines arranged in parallel in a second direction perpendicular to the first direction."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"4F2 self align fin bottom electrodes FET drive phase change memory","description":"Arrays of memory cells are described along with devices thereof and method for manufacturing. Memory cells described herein include memory elements comprising programmable resistive material and self-","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8513637","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8513637","citation_suggestion":"Patentable. \"4F2 self align fin bottom electrodes FET drive phase change memory\" (US-8513637). https://patentable.app/patents/US-8513637","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8513637","json":"https://patentable.app/api/llm-context/US-8513637","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T11:11:25.630Z"}