{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8513672","patent":{"patent_number":"US-8513672","title":"Wafer precursor prepared for group III nitride epitaxial growth on a composite substrate having diamond and silicon carbide layers, and semiconductor laser formed thereon","assignee":null,"inventors":[],"filing_date":"2010-11-23T00:00:00.000Z","publication_date":"2013-08-20T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":12,"abstract":"A high power, wide-bandgap device is disclosed that exhibits reduced junction temperature and higher power density during operation and improved reliability at a rated power density. The device includes a diamond substrate for providing a heat sink with a thermal conductivity greater than silicon carbide, a single crystal silicon carbide layer on the diamond substrate for providing a supporting crystal lattice match for wide-bandgap material structures that is better than the crystal lattice match of diamond, and a Group III nitride heterostructure on the single crystal silicon carbide layer for providing device characteristics."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Wafer precursor prepared for group III nitride epitaxial growth on a composite substrate having diamond and silicon carbide layers, and semiconductor laser formed thereon","description":"A high power, wide-bandgap device is disclosed that exhibits reduced junction temperature and higher power density during operation and improved reliability at a rated power density. The device includ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8513672","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8513672","citation_suggestion":"Patentable. \"Wafer precursor prepared for group III nitride epitaxial growth on a composite substrate having diamond and silicon carbide layers, and semiconductor laser formed thereon\" (US-8513672). https://patentable.app/patents/US-8513672","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8513672","json":"https://patentable.app/api/llm-context/US-8513672","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T17:16:47.365Z"}