{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8513674","patent":{"patent_number":"US-8513674","title":"Semiconductor device and method of manufacturing the same","assignee":null,"inventors":[],"filing_date":"2009-11-25T00:00:00.000Z","publication_date":"2013-08-20T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":5,"abstract":"A method of manufacturing of a semiconductor device (101) includes: a fine pattern forming step of forming p-type impurity regions (3, 4) and surface ohmic contact electrodes (5) using a stepper, after forming an N-type epitaxial layer (2) on a SiC single-crystal substrate (1); a protective film planarizing step of forming a protective film so as to cover the surface ohmic contact electrodes (5) and performing planarization of the protective film; a substrate thinning step of thinning the SiC single-crystal substrate (1); a backside ohmic contact electrode forming step of forming a backside ohmic contact electrode (7) on the SiC single-crystal substrate (1); a surface Schottky contact electrode forming step of forming a Schottky metal portion (8) connected to the p-type impurity regions (3, 4) and the surface ohmic contact electrodes (5); and a step of forming a surface pad electrode (9) that covers the Schottky metal portion (8)."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device and method of manufacturing the same","description":"A method of manufacturing of a semiconductor device (101) includes: a fine pattern forming step of forming p-type impurity regions (3, 4) and surface ohmic contact electrodes (5) using a stepper, afte","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8513674","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8513674","citation_suggestion":"Patentable. \"Semiconductor device and method of manufacturing the same\" (US-8513674). https://patentable.app/patents/US-8513674","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8513674","json":"https://patentable.app/api/llm-context/US-8513674","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T13:42:10.707Z"}