{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8513720","patent":{"patent_number":"US-8513720","title":"Metal oxide semiconductor thin film transistors","assignee":null,"inventors":[],"filing_date":"2010-07-14T00:00:00.000Z","publication_date":"2013-08-20T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":20,"abstract":"A top gate and bottom gate thin film transistor (TFT) are provided with an associated fabrication method. The TFT is fabricated from a substrate, and an active metal oxide semiconductor (MOS) layer overlying the substrate. Source/drain (S/D) regions are formed in contact with the active MOS layer. A channel region is interposed between the S/D regions. The TFT includes a gate electrode, and a gate dielectric interposed between the channel region and the gate electrode. The active MOS layer may be ZnOx, InOx, GaOx, SnOx, or combinations of the above-mentioned materials. The active MOS layer also includes a primary dopant such as H, K, Sc, La, Mo, Bi, Ce, Pr, Nd, Sm, Dy, or combinations of the above-mentioned dopants. The active MOS layer may also include a secondary dopant."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Metal oxide semiconductor thin film transistors","description":"A top gate and bottom gate thin film transistor (TFT) are provided with an associated fabrication method. The TFT is fabricated from a substrate, and an active metal oxide semiconductor (MOS) layer ov","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8513720","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8513720","citation_suggestion":"Patentable. \"Metal oxide semiconductor thin film transistors\" (US-8513720). https://patentable.app/patents/US-8513720","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8513720","json":"https://patentable.app/api/llm-context/US-8513720","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T18:46:26.605Z"}