{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8513724","patent":{"patent_number":"US-8513724","title":"Semiconductor device","assignee":null,"inventors":[],"filing_date":"2011-11-07T00:00:00.000Z","publication_date":"2013-08-20T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":15,"abstract":"A gate insulating film includes an oxygen-containing insulating film and a high dielectric constant insulating film formed on the oxygen-containing insulating film and containing a first metal. The high dielectric constant insulating film further includes a second metal different from the first metal. Part of the high dielectric constant insulating film having the maximum composition ratio of the second metal is away from an interface between the high dielectric constant insulating film and the oxygen-containing insulating film and an interface between the high dielectric constant insulating film and the gate electrode. The second metal exists also in a portion of the oxygen-containing insulating film near the interface between the high dielectric constant insulating film and the oxygen-containing insulating film."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device","description":"A gate insulating film includes an oxygen-containing insulating film and a high dielectric constant insulating film formed on the oxygen-containing insulating film and containing a first metal. The hi","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8513724","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8513724","citation_suggestion":"Patentable. \"Semiconductor device\" (US-8513724). https://patentable.app/patents/US-8513724","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8513724","json":"https://patentable.app/api/llm-context/US-8513724","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T21:13:18.919Z"}