{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8513738","patent":{"patent_number":"US-8513738","title":"ESD field-effect transistor and integrated diffusion resistor","assignee":null,"inventors":[],"filing_date":"2011-07-21T00:00:00.000Z","publication_date":"2013-08-20T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":26,"abstract":"An electrostatic discharge protection device, methods of fabricating an electrostatic discharge protection device, and design structures for an electrostatic discharge protection device. A drain of a first field-effect transistor and a diffusion resistor of higher electrical resistance may be formed as different portions of a doped region. The diffusion resistor, which is directly coupled with the drain of the first field-effect transistor, may be defined using an isolation region of dielectric material disposed in the doped region and selective silicide formation. The electrostatic discharge protection device may also include a second field-effect transistor having a drain as a portion the doped region that is directly coupled with the diffusion resistor and indirectly coupled by the diffusion resistor with the drain of the first field-effect transistor."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"ESD field-effect transistor and integrated diffusion resistor","description":"An electrostatic discharge protection device, methods of fabricating an electrostatic discharge protection device, and design structures for an electrostatic discharge protection device. A drain of a ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8513738","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8513738","citation_suggestion":"Patentable. \"ESD field-effect transistor and integrated diffusion resistor\" (US-8513738). https://patentable.app/patents/US-8513738","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8513738","json":"https://patentable.app/api/llm-context/US-8513738","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T17:15:03.569Z"}