{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8513763","patent":{"patent_number":"US-8513763","title":"Silicon carbide semiconductor device","assignee":null,"inventors":[],"filing_date":"2010-06-22T00:00:00.000Z","publication_date":"2013-08-20T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":6,"abstract":"There was a problem that it was difficult to manufacture silicon carbide semiconductor devices with suppressed variations in characteristics without increasing the number of process steps. A silicon carbide semiconductor device according to the present invention includes an N type SiC substrate and an N type SiC epitaxial layer as a silicon carbide semiconductor substrate of a first conductivity type, a plurality of recesses intermittently formed in a surface of the N type SiC epitaxial layer, P type regions as second-conductivity-type semiconductor layers formed in the N type SiC epitaxial layer in the bottoms of the plurality of recesses, and a Schottky electrode selectively formed over the surface of the N type SiC epitaxial layer, wherein the plurality of recesses all have an equal depth."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Silicon carbide semiconductor device","description":"There was a problem that it was difficult to manufacture silicon carbide semiconductor devices with suppressed variations in characteristics without increasing the number of process steps. A silicon c","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8513763","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8513763","citation_suggestion":"Patentable. \"Silicon carbide semiconductor device\" (US-8513763). https://patentable.app/patents/US-8513763","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8513763","json":"https://patentable.app/api/llm-context/US-8513763","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T16:50:29.136Z"}