{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8513780","patent":{"patent_number":"US-8513780","title":"Semiconductor device having inter-level dielectric layer with hole-sealing and method for manufacturing the same","assignee":null,"inventors":[],"filing_date":"2011-02-26T00:00:00.000Z","publication_date":"2013-08-20T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":17,"abstract":"The present invention discloses an inter-level dielectric layer for a semiconductor device, a method for manufacturing the same and a semiconductor device having said inter-level dielectric layer. The method lies in forming non-interconnected holes within a dielectric layer, and these holes may be filled with porous low-k dielectric material with a much lower dielectric constant, or forming holes within the dielectric layer by filling the upper parts of the holes. The inter-level dielectric layer in such a structure has a much lower dielectric constant, reduces RC delay between devices of integrated circuits and also is easy to integrate; besides, since the holes within the dielectric layer are non-interconnected, they shall not cause change to the dielectric constant of the dielectric material or a short circuit between wires, thus the device shall have better stability and reliability which then improve performance of the circuit."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device having inter-level dielectric layer with hole-sealing and method for manufacturing the same","description":"The present invention discloses an inter-level dielectric layer for a semiconductor device, a method for manufacturing the same and a semiconductor device having said inter-level dielectric layer. The","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8513780","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8513780","citation_suggestion":"Patentable. \"Semiconductor device having inter-level dielectric layer with hole-sealing and method for manufacturing the same\" (US-8513780). https://patentable.app/patents/US-8513780","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8513780","json":"https://patentable.app/api/llm-context/US-8513780","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T16:37:57.933Z"}