{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8513805","patent":{"patent_number":"US-8513805","title":"Manufacturing of a semiconductor device and the manufacturing method","assignee":null,"inventors":[],"filing_date":"2008-02-27T00:00:00.000Z","publication_date":"2013-08-20T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":8,"abstract":"A technology that improves the reliability of a semiconductor device and realizes a high performance by a laminated structure that has enough barrier properties against copper, reduces the wire delay time by lowering the capacitance between wirings and improves the adhesion between wirings is provided. There is a semiconductor device having: a first copper wiring layer, a first barrier layer on the first copper wiring layer, a silicon oxide series porous insulating layer on the first barrier layer, a second barrier layer on the silicon oxide series porous insulating layer, and a second copper wiring layer on the second barrier layer, wherein at least one of the first barrier layer and the second barrier layer consists of an amorphous carbon film, wherein a silicon series insulating layer is directly connected between the amorphous carbon film and any of the first copper wiring layer or the second copper wiring layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Manufacturing of a semiconductor device and the manufacturing method","description":"A technology that improves the reliability of a semiconductor device and realizes a high performance by a laminated structure that has enough barrier properties against copper, reduces the wire delay ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8513805","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8513805","citation_suggestion":"Patentable. \"Manufacturing of a semiconductor device and the manufacturing method\" (US-8513805). https://patentable.app/patents/US-8513805","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8513805","json":"https://patentable.app/api/llm-context/US-8513805","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T12:19:02.512Z"}