{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8514605","patent":{"patent_number":"US-8514605","title":"MRAM diode array and access method","assignee":null,"inventors":[],"filing_date":"2012-09-12T00:00:00.000Z","publication_date":"2013-08-20T00:00:00.000Z","cpc_codes":["G11C","G11C"],"num_claims":20,"abstract":"A memory unit includes a magnetic tunnel junction data cell is electrically coupled to a bit line and a source line. The magnetic tunnel junction data cell is configured to switch between a high resistance state and a low resistance state by passing a write current through the magnetic tunnel junction data cell. A first diode is electrically between the magnetic tunnel junction data cell and the source line and a second diode is electrically between the magnetic tunnel junction data cell and the source line. The first diode and second diode are in parallel electrical connection, and having opposing forward bias directions. The memory unit is configured to be precharged to a specified precharge voltage level and the precharge voltage is less than a threshold voltage of the first diode and second diode."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"MRAM diode array and access method","description":"A memory unit includes a magnetic tunnel junction data cell is electrically coupled to a bit line and a source line. The magnetic tunnel junction data cell is configured to switch between a high resis","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8514605","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8514605","citation_suggestion":"Patentable. \"MRAM diode array and access method\" (US-8514605). https://patentable.app/patents/US-8514605","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8514605","json":"https://patentable.app/api/llm-context/US-8514605","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T15:39:50.320Z"}