{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8514617","patent":{"patent_number":"US-8514617","title":"Magnetic memory element and storage device using the same","assignee":null,"inventors":[],"filing_date":"2010-03-17T00:00:00.000Z","publication_date":"2013-08-20T00:00:00.000Z","cpc_codes":["B82Y","B82Y","G11C","G11C","G11C"],"num_claims":16,"abstract":"A magnetic memory element capable of maintaining high thermal stability (retention characteristics) while reducing a writing current. The magnetic memory element includes a magnetic tunnel junction having a first magnetic body including a perpendicular magnetization film, an insulating layer, and a second magnetic body serving as a storage layer including a perpendicular magnetization film, which are sequentially stacked. A thermal expansion layer is disposed in contact with the magnetic tunnel junction portion. The second magnetic body is deformed in a direction in which the cross section thereof increases or decreases by the thermal expansion or contraction of the thermal expansion layer due to the flow of a current, thereby reducing a switching current threshold value required to change the magnetization direction."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Magnetic memory element and storage device using the same","description":"A magnetic memory element capable of maintaining high thermal stability (retention characteristics) while reducing a writing current. The magnetic memory element includes a magnetic tunnel junction ha","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8514617","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8514617","citation_suggestion":"Patentable. \"Magnetic memory element and storage device using the same\" (US-8514617). https://patentable.app/patents/US-8514617","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8514617","json":"https://patentable.app/api/llm-context/US-8514617","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T16:55:27.492Z"}