{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8518766","patent":{"patent_number":"US-8518766","title":"Method of forming switching device having a molybdenum oxynitride metal gate","assignee":null,"inventors":[],"filing_date":"2012-06-28T00:00:00.000Z","publication_date":"2013-08-27T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":8,"abstract":"A field effect transistor (FET) includes a body region and a source region disposed at least partially in the body region. The FET also includes a drain region disposed at least partially in the body region and a molybdenum oxynitride (MoNO) gate. The FET also includes a dielectric having a high dielectric constant (k) disposed between the body region and the MoNO gate."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of forming switching device having a molybdenum oxynitride metal gate","description":"A field effect transistor (FET) includes a body region and a source region disposed at least partially in the body region. The FET also includes a drain region disposed at least partially in the body ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8518766","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8518766","citation_suggestion":"Patentable. \"Method of forming switching device having a molybdenum oxynitride metal gate\" (US-8518766). https://patentable.app/patents/US-8518766","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8518766","json":"https://patentable.app/api/llm-context/US-8518766","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T23:23:55.490Z"}