{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8518773","patent":{"patent_number":"US-8518773","title":"Method of fabricating semiconductor capacitor","assignee":null,"inventors":[],"filing_date":"2012-09-14T00:00:00.000Z","publication_date":"2013-08-27T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":11,"abstract":"A method of fabricating a semiconductor capacitor includes forming a cavity in a first dielectric layer. Then, a nitride stack comprising a slow-etch nitride layer disposed between two fast-etch nitride layers is deposited in the cavity. Next, a portion of the nitride stack is etched within the cavity. Continuing, a metal plug is deposited in the cavity. The fast-etch nitride layers of the nitride stack are removed while preserving the slow-etch nitride layer of the nitride stack. A first metal layer is deposited over the slow-etch nitride layer, a second dielectric layer is deposited over the first metal layer, and a second metal layer is deposited over the second dielectric layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of fabricating semiconductor capacitor","description":"A method of fabricating a semiconductor capacitor includes forming a cavity in a first dielectric layer. Then, a nitride stack comprising a slow-etch nitride layer disposed between two fast-etch nitri","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8518773","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8518773","citation_suggestion":"Patentable. \"Method of fabricating semiconductor capacitor\" (US-8518773). https://patentable.app/patents/US-8518773","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8518773","json":"https://patentable.app/api/llm-context/US-8518773","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T16:18:14.243Z"}