{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8518776","patent":{"patent_number":"US-8518776","title":"Methods for producing a tunnel field-effect transistor","assignee":null,"inventors":[],"filing_date":"2011-04-06T00:00:00.000Z","publication_date":"2013-08-27T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":19,"abstract":"A method for producing a tunnel field-effect transistor is disclosed. Connection regions of different doping types are produced by means of self-aligning implantation methods."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Methods for producing a tunnel field-effect transistor","description":"A method for producing a tunnel field-effect transistor is disclosed. Connection regions of different doping types are produced by means of self-aligning implantation methods.","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8518776","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8518776","citation_suggestion":"Patentable. \"Methods for producing a tunnel field-effect transistor\" (US-8518776). https://patentable.app/patents/US-8518776","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8518776","json":"https://patentable.app/api/llm-context/US-8518776","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T23:03:35.400Z"}