{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8518783","patent":{"patent_number":"US-8518783","title":"Gate structure for field effect transistor","assignee":null,"inventors":[],"filing_date":"2009-04-27T00:00:00.000Z","publication_date":"2013-08-27T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L"],"num_claims":9,"abstract":"A field effect transistor having a gate structure that comprises an interfacial layer positioned in between the transistor channel region and a high-K dielectric layer of the gate stack. The interfacial layer comprises AlxSiyOz, which has a higher relative dielectric constant value than SiO2. A method of forming the gate structure of a field effect transistor. The method includes forming a gate stack comprising, in order: a SiO2-based layer adjacent a channel region of the field effect transistor; a high-K dielectric layer on the SiO2-based layer; and a gate electrode on the high-K dielectric layer. The method also includes introducing Al into the SiO2-based layer to form an AlxSiyOz interfacial layer in between the high-K dielectric layer and the channel region. A heating step to allows Al introduced into channel region to diffuse out of the channel region into the interfacial layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Gate structure for field effect transistor","description":"A field effect transistor having a gate structure that comprises an interfacial layer positioned in between the transistor channel region and a high-K dielectric layer of the gate stack. The interfaci","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8518783","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8518783","citation_suggestion":"Patentable. \"Gate structure for field effect transistor\" (US-8518783). https://patentable.app/patents/US-8518783","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8518783","json":"https://patentable.app/api/llm-context/US-8518783","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T23:03:47.439Z"}