{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8518799","patent":{"patent_number":"US-8518799","title":"Process of making semiconductor on glass substrates with a stiffening layer","assignee":null,"inventors":[],"filing_date":"2012-12-14T00:00:00.000Z","publication_date":"2013-08-27T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":28,"abstract":"A process of making semiconductor-on-glass substrates having a relatively stiff (e.g. relatively high Young's modulus of 125 or higher) stiffening layer between the silicon film and the glass in an ion implantation thin film transfer process by depositing a stiffening layer or layers on one of the donor wafer or the glass substrate in order to eliminate the canyons and pin holes that otherwise form in the surface of the transferred silicon film during the thin film transfer process. The new stiffening layer may be formed of a material, such as silicon nitride, that also serves as an efficient barrier against penetration of sodium and other harmful impurities from the glass substrate into the silicon film."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Process of making semiconductor on glass substrates with a stiffening layer","description":"A process of making semiconductor-on-glass substrates having a relatively stiff (e.g. relatively high Young's modulus of 125 or higher) stiffening layer between the silicon film and the glass in an io","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8518799","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8518799","citation_suggestion":"Patentable. \"Process of making semiconductor on glass substrates with a stiffening layer\" (US-8518799). https://patentable.app/patents/US-8518799","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8518799","json":"https://patentable.app/api/llm-context/US-8518799","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T16:46:34.862Z"}