{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8518807","patent":{"patent_number":"US-8518807","title":"Radiation hardened SOI structure and method of making same","assignee":null,"inventors":[],"filing_date":"2012-06-22T00:00:00.000Z","publication_date":"2013-08-27T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":20,"abstract":"An SOI substrate including a buried insulator layer positioned between a base substrate and a top semiconductor active layer is first provided. A semiconductor device can then be formed on and/or within a portion of the top semiconductor active layer. A bottommost surface of the buried insulator layer which is opposite a topmost surface of the buried insulator layer that forms an interface with the top semiconductor active layer can be then exposed. Ions can then be implanted through the bottommost surface of the buried insulator layer and into a portion of the buried insulator layer. The ions are implanted at energy ranges that do not disturb the buried insulator layer/top semiconductor active layer interface, while leaving a relatively thin portion of the buried insulator layer near the buried insulator layer/top semiconductor active layer interface intact."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Radiation hardened SOI structure and method of making same","description":"An SOI substrate including a buried insulator layer positioned between a base substrate and a top semiconductor active layer is first provided. A semiconductor device can then be formed on and/or with","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8518807","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8518807","citation_suggestion":"Patentable. \"Radiation hardened SOI structure and method of making same\" (US-8518807). https://patentable.app/patents/US-8518807","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8518807","json":"https://patentable.app/api/llm-context/US-8518807","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T16:18:41.339Z"}