{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8518808","patent":{"patent_number":"US-8518808","title":"Defects annealing and impurities activation in III-nitride compound","assignee":null,"inventors":[],"filing_date":"2011-09-16T00:00:00.000Z","publication_date":"2013-08-27T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":37,"abstract":"A GaN sample in a sealed enclosure is heated very fast to a high temperature above the point where GaN is thermodynamically stable and is then cooled down very fast to a temperature where it is thermodynamically stable. The time of the GaN exposure to a high temperature range above its thermodynamic stability is sufficiently short, in a range of few seconds, to prevent the GaN from decomposing. This heating and cooling cycle is repeated multiple times without removing the sample from the enclosure. As a result, by accumulating the exposure time in each cycle, the GaN sample can be exposed to a high temperature above its point of thermodynamic stability for a long time but the GaN sample integrity is maintained (i.e., the GaN doesn't decompose) due to the extremely short heating duration of each single cycle."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Defects annealing and impurities activation in III-nitride compound","description":"A GaN sample in a sealed enclosure is heated very fast to a high temperature above the point where GaN is thermodynamically stable and is then cooled down very fast to a temperature where it is thermo","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8518808","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8518808","citation_suggestion":"Patentable. \"Defects annealing and impurities activation in III-nitride compound\" (US-8518808). https://patentable.app/patents/US-8518808","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8518808","json":"https://patentable.app/api/llm-context/US-8518808","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T20:30:18.814Z"}