{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8518830","patent":{"patent_number":"US-8518830","title":"Plasma etching method and storage medium","assignee":null,"inventors":[],"filing_date":"2012-03-23T00:00:00.000Z","publication_date":"2013-08-27T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":8,"abstract":"Disclosed is a plasma etching method capable of carrying out an etching process while preventing an etching shape defect such as a bowing from occurring. The plasma etching method includes etching an organic film formed on the substrate to a middle depth using an inorganic film as a mask by generating plasma between an upper electrode a surface of which is formed with a silicon containing material and a lower electrode where a substrate to be processed is placed thereon in a processing chamber; forming a protective film including the silicon containing material of the upper electrode on a side wall of an etching region formed from the etching process by applying a negative DC voltage on the upper electrode while generating the plasma; and continuing the etching process using the plasma thereby etching the organic film to a predetermined depth."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Plasma etching method and storage medium","description":"Disclosed is a plasma etching method capable of carrying out an etching process while preventing an etching shape defect such as a bowing from occurring. The plasma etching method includes etching an ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8518830","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8518830","citation_suggestion":"Patentable. \"Plasma etching method and storage medium\" (US-8518830). https://patentable.app/patents/US-8518830","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8518830","json":"https://patentable.app/api/llm-context/US-8518830","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T18:05:52.760Z"}