{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8518831","patent":{"patent_number":"US-8518831","title":"Method of forming semiconductor memory device","assignee":null,"inventors":[],"filing_date":"2011-12-05T00:00:00.000Z","publication_date":"2013-08-27T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":25,"abstract":"A method of forming semiconductor memory device includes forming first to fourth spacers over a target layer including a first region and second regions adjacent to the first region so that a first spacer group including the first spacers spaced at a first interval is formed in the first region of the target layer, a second spacer group including the second spacers spaced at second intervals is formed in the second regions, a third spacer is formed between the first and the second spacer groups, and fourth spacers are formed between the third spacer and the first spacer group; forming an overlap pattern blocking the target layer; and forming first patterns, spaced at the first interval and each formed to have a first width, in the first region and second patterns, spaced at the second intervals and each formed to have a second width, in the second regions."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of forming semiconductor memory device","description":"A method of forming semiconductor memory device includes forming first to fourth spacers over a target layer including a first region and second regions adjacent to the first region so that a first sp","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8518831","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8518831","citation_suggestion":"Patentable. \"Method of forming semiconductor memory device\" (US-8518831). https://patentable.app/patents/US-8518831","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8518831","json":"https://patentable.app/api/llm-context/US-8518831","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T01:07:12.867Z"}