{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8519403","patent":{"patent_number":"US-8519403","title":"Angled implantation for deep submicron device optimization","assignee":null,"inventors":[],"filing_date":"2011-02-04T00:00:00.000Z","publication_date":"2013-08-27T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":8,"abstract":"A method for forming a submicron device includes depositing a hard mask over a first region that includes a polysilicon well of a first dopant type and a gate of a second dopant type and a second region that includes a polysilicon well of a second dopant type and a gate of a first dopant type. The hard mask over the first region is removed. Angled implantation of the first dopant type is performed to form pockets under the gate of the second dopant type."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Angled implantation for deep submicron device optimization","description":"A method for forming a submicron device includes depositing a hard mask over a first region that includes a polysilicon well of a first dopant type and a gate of a second dopant type and a second regi","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8519403","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8519403","citation_suggestion":"Patentable. \"Angled implantation for deep submicron device optimization\" (US-8519403). https://patentable.app/patents/US-8519403","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8519403","json":"https://patentable.app/api/llm-context/US-8519403","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T22:12:03.802Z"}