{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8519445","patent":{"patent_number":"US-8519445","title":"Poly profile engineering to modulate spacer induced stress for device enhancement","assignee":null,"inventors":[],"filing_date":"2011-07-14T00:00:00.000Z","publication_date":"2013-08-27T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":20,"abstract":"The present invention provides a method of inducing stress in a semiconductor device substrate by applying an ion implantation to a gate region before a source/drain annealing process. The source/drain region may then be annealed along with the gate which will cause the gate to expand in certain areas due to said ion implantation. As a result, stress caused by said expansion of the gate is transferred to the channel region in the semiconductor substrate."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Poly profile engineering to modulate spacer induced stress for device enhancement","description":"The present invention provides a method of inducing stress in a semiconductor device substrate by applying an ion implantation to a gate region before a source/drain annealing process. The source/drai","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8519445","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8519445","citation_suggestion":"Patentable. \"Poly profile engineering to modulate spacer induced stress for device enhancement\" (US-8519445). https://patentable.app/patents/US-8519445","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8519445","json":"https://patentable.app/api/llm-context/US-8519445","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T05:12:02.674Z"}