{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8519478","patent":{"patent_number":"US-8519478","title":"Schottky barrier diode, a method of forming the diode and a design structure for the diode","assignee":null,"inventors":[],"filing_date":"2011-02-02T00:00:00.000Z","publication_date":"2013-08-27T00:00:00.000Z","cpc_codes":["G06F"],"num_claims":20,"abstract":"Disclosed are embodiments of a Schottky barrier diode. This diode can be formed in a semiconductor substrate having a doped region with a first conductivity type. A trench isolation structure can laterally surround a section of the doped region at the top surface of the substrate. A semiconductor layer can be positioned on the top surface of the substrate. This semiconductor layer can have a Schottky barrier portion over the defined section of the doped region and a guardring portion over the trench isolation structure laterally surrounding the Schottky barrier portion. The Schottky barrier portion can have the first conductivity type and the guarding portion can have a second conductivity type different from the first conductivity type. A metal silicide layer can overlie the semiconductor layer. Also disclosed are embodiments of a method of forming this Schottky barrier diode and of a design structure for the Schottky barrier diode."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Schottky barrier diode, a method of forming the diode and a design structure for the diode","description":"Disclosed are embodiments of a Schottky barrier diode. This diode can be formed in a semiconductor substrate having a doped region with a first conductivity type. A trench isolation structure can late","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8519478","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8519478","citation_suggestion":"Patentable. \"Schottky barrier diode, a method of forming the diode and a design structure for the diode\" (US-8519478). https://patentable.app/patents/US-8519478","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8519478","json":"https://patentable.app/api/llm-context/US-8519478","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T09:42:39.253Z"}