{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8519479","patent":{"patent_number":"US-8519479","title":"Generation of multiple diameter nanowire field effect transistors","assignee":null,"inventors":[],"filing_date":"2010-05-12T00:00:00.000Z","publication_date":"2013-08-27T00:00:00.000Z","cpc_codes":["B82Y","B82Y","B82Y","H01L","H01L"],"num_claims":4,"abstract":"A method of modifying a wafer having a semiconductor disposed on an insulator is provided and includes forming first and second nanowire channels connected at each end to semiconductor pads at first and second wafer regions, respectively, with second nanowire channel sidewalls being misaligned relative to a crystallographic plane of the semiconductor more than first nanowire channel sidewalls and displacing the semiconductor toward an alignment condition between the sidewalls and the crystallographic plane such that thickness differences between the first and second nanowire channels reflect the greater misalignment of the second nanowire channel sidewalls."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Generation of multiple diameter nanowire field effect transistors","description":"A method of modifying a wafer having a semiconductor disposed on an insulator is provided and includes forming first and second nanowire channels connected at each end to semiconductor pads at first a","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8519479","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8519479","citation_suggestion":"Patentable. \"Generation of multiple diameter nanowire field effect transistors\" (US-8519479). https://patentable.app/patents/US-8519479","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8519479","json":"https://patentable.app/api/llm-context/US-8519479","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T09:36:38.610Z"}