{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8519481","patent":{"patent_number":"US-8519481","title":"Voids in STI regions for forming bulk FinFETs","assignee":null,"inventors":[],"filing_date":"2009-11-04T00:00:00.000Z","publication_date":"2013-08-27T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":29,"abstract":"An integrated circuit structure includes a substrate; two insulation regions over the substrate, with one of the two insulation regions including a void therein; and a first semiconductor strip between and adjoining the two insulation regions. The first semiconductor strip includes a top portion forming a fin over top surfaces of the two insulation regions."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Voids in STI regions for forming bulk FinFETs","description":"An integrated circuit structure includes a substrate; two insulation regions over the substrate, with one of the two insulation regions including a void therein; and a first semiconductor strip betwee","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8519481","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8519481","citation_suggestion":"Patentable. \"Voids in STI regions for forming bulk FinFETs\" (US-8519481). https://patentable.app/patents/US-8519481","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8519481","json":"https://patentable.app/api/llm-context/US-8519481","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T20:48:52.337Z"}