{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8519484","patent":{"patent_number":"US-8519484","title":"Semiconductor devices having dual trench, methods of fabricating the same, and electronic system having the same","assignee":null,"inventors":[],"filing_date":"2012-02-08T00:00:00.000Z","publication_date":"2013-08-27T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":13,"abstract":"A semiconductor device having a dual trench and methods of fabricating the same, a semiconductor module, an electronic circuit board, and an electronic system are provided. The semiconductor device includes a semiconductor substrate having a cell region including a cell trench and a peripheral region including a peripheral trench. The cell trench is filled with a core insulating material layer, and the peripheral trench is filled with a padding insulating material layer conformably formed on an inner surface thereof and a core insulating material layer formed on an inner surface of the padding insulating material layer. The core insulating material layer has a greater fluidity than the padding insulating material layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor devices having dual trench, methods of fabricating the same, and electronic system having the same","description":"A semiconductor device having a dual trench and methods of fabricating the same, a semiconductor module, an electronic circuit board, and an electronic system are provided. The semiconductor device in","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8519484","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8519484","citation_suggestion":"Patentable. \"Semiconductor devices having dual trench, methods of fabricating the same, and electronic system having the same\" (US-8519484). https://patentable.app/patents/US-8519484","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8519484","json":"https://patentable.app/api/llm-context/US-8519484","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T19:33:54.829Z"}