{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8519487","patent":{"patent_number":"US-8519487","title":"Semiconductor device","assignee":null,"inventors":[],"filing_date":"2011-03-21T00:00:00.000Z","publication_date":"2013-08-27T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":10,"abstract":"A semiconductor device is disclosed. The semiconductor device includes: a substrate; a gate structure disposed on the substrate, wherein the gate structure comprises a high-k dielectric layer; and a first seal layer disposed on a sidewall of the gate structure, wherein the first seal layer is an oxygen-free seal layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device","description":"A semiconductor device is disclosed. The semiconductor device includes: a substrate; a gate structure disposed on the substrate, wherein the gate structure comprises a high-k dielectric layer; and a f","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8519487","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8519487","citation_suggestion":"Patentable. \"Semiconductor device\" (US-8519487). https://patentable.app/patents/US-8519487","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8519487","json":"https://patentable.app/api/llm-context/US-8519487","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T19:32:59.404Z"}