{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8519496","patent":{"patent_number":"US-8519496","title":"Spin-transfer torque magnetic random access memory with multi-layered storage layer","assignee":null,"inventors":[],"filing_date":"2011-02-25T00:00:00.000Z","publication_date":"2013-08-27T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C"],"num_claims":27,"abstract":"A spin-transfer torque magnetic random access memory (STTMRAM) element is configured to store a state when electrical current is applied thereto. The STTMRAM element includes first and second free layers, each of which having an associated direction of magnetization defining the state of the STTMRAM element. Prior to the application of electrical current to the STTMRAM element, the direction of the magnetization of the first and second free layers each is in-plane and after the application of electrical current to the STTMRAM element, the direction of magnetization of the second free layer becomes substantially titled out-of-plane and the direction of magnetization of the first free layer switches. Upon electrical current being discontinued, the direction of magnetization of the second free layer remains in a direction that is substantially opposite to that of the first free layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Spin-transfer torque magnetic random access memory with multi-layered storage layer","description":"A spin-transfer torque magnetic random access memory (STTMRAM) element is configured to store a state when electrical current is applied thereto. The STTMRAM element includes first and second free lay","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8519496","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8519496","citation_suggestion":"Patentable. \"Spin-transfer torque magnetic random access memory with multi-layered storage layer\" (US-8519496). https://patentable.app/patents/US-8519496","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8519496","json":"https://patentable.app/api/llm-context/US-8519496","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T16:55:30.849Z"}