{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8519498","patent":{"patent_number":"US-8519498","title":"Magnetic stack having reference layers with orthogonal magnetization orientation directions","assignee":null,"inventors":[],"filing_date":"2012-09-13T00:00:00.000Z","publication_date":"2013-08-27T00:00:00.000Z","cpc_codes":["B82Y","G11C"],"num_claims":14,"abstract":"A magnetic cell includes a ferromagnetic free layer having a free magnetization orientation direction and a first ferromagnetic pinned reference layer having a first reference magnetization orientation direction that is parallel or anti-parallel to the free magnetization orientation direction. A first oxide barrier layer is between the ferromagnetic free layer and the first ferromagnetic pinned reference layer. The magnetic cell further includes a second ferromagnetic pinned reference layer having a second reference magnetization orientation direction that is orthogonal to the first reference magnetization orientation direction. The ferromagnetic free layer is between the first ferromagnetic pinned reference layer and the second ferromagnetic pinned reference layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Magnetic stack having reference layers with orthogonal magnetization orientation directions","description":"A magnetic cell includes a ferromagnetic free layer having a free magnetization orientation direction and a first ferromagnetic pinned reference layer having a first reference magnetization orientatio","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8519498","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8519498","citation_suggestion":"Patentable. \"Magnetic stack having reference layers with orthogonal magnetization orientation directions\" (US-8519498). https://patentable.app/patents/US-8519498","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8519498","json":"https://patentable.app/api/llm-context/US-8519498","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T11:13:33.852Z"}