{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8519509","patent":{"patent_number":"US-8519509","title":"Semiconductor device and manufacturing method thereof","assignee":null,"inventors":[],"filing_date":"2011-04-08T00:00:00.000Z","publication_date":"2013-08-27T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","G11C","H01L","H01L","H01L"],"num_claims":28,"abstract":"An object of one embodiment of the present invention is to provide an antifuse which has low writing voltage. The antifuse is used for a memory element for a read only memory device. The antifuse includes a first conductive layer, an insulating layer, a semiconductor layer, and a second conductive layer. The insulating layer included in the antifuse is a silicon oxynitride layer formed by adding ammonia to a source gas. When hydrogen is contained in the layer at greater than or equal to 1.2×1021 atoms/cm3 and less than or equal to 3.4×1021 atoms/cm3 or nitrogen is contained in the layer at greater than or equal to 3.2×1020 atoms/cm3 and less than or equal to 2.2×1021 atoms/cm3, writing can be performed at low voltage."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device and manufacturing method thereof","description":"An object of one embodiment of the present invention is to provide an antifuse which has low writing voltage. The antifuse is used for a memory element for a read only memory device. The antifuse incl","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8519509","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8519509","citation_suggestion":"Patentable. \"Semiconductor device and manufacturing method thereof\" (US-8519509). https://patentable.app/patents/US-8519509","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8519509","json":"https://patentable.app/api/llm-context/US-8519509","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T17:29:14.496Z"}