{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8519538","patent":{"patent_number":"US-8519538","title":"Laser etch via formation","assignee":null,"inventors":[],"filing_date":"2010-04-28T00:00:00.000Z","publication_date":"2013-08-27T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":21,"abstract":"The present disclosure provides methods for forming semiconductor devices with laser-etched vias and apparatus including the same. In one embodiment, a method of fabricating a semiconductor device includes providing a substrate having a frontside and a backside, and providing a layer above the frontside of the substrate, the layer having a different composition from the substrate. The method further includes controlling a laser power and a laser pulse number to laser etch an opening through the layer and at least a portion of the frontside of the substrate, filling the opening with a conductive material to form a via, removing a portion of the backside of the substrate to expose the via, and electrically coupling a first element to a second element with the via. A semiconductor device fabricated by such a method is also disclosed."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Laser etch via formation","description":"The present disclosure provides methods for forming semiconductor devices with laser-etched vias and apparatus including the same. In one embodiment, a method of fabricating a semiconductor device inc","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8519538","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8519538","citation_suggestion":"Patentable. \"Laser etch via formation\" (US-8519538). https://patentable.app/patents/US-8519538","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8519538","json":"https://patentable.app/api/llm-context/US-8519538","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T17:58:54.703Z"}