{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8519541","patent":{"patent_number":"US-8519541","title":"Semiconductor device having plural conductive layers disposed within dielectric layer","assignee":null,"inventors":[],"filing_date":"2008-08-14T00:00:00.000Z","publication_date":"2013-08-27T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":10,"abstract":"A method for manufacturing a semiconductor device is disclosed. A semiconductor substrate such as bare silicon is provided, and a dielectric layer is formed over the semiconductor substrate. An opening is provided within the dielectric layer by removing a portion of the dielectric layer. A conformal first conductive layer is formed over the dielectric layer and the opening. A conformal second conductive layer is formed over the first conductive layer. A conformal barrier layer is formed over the second conductive layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device having plural conductive layers disposed within dielectric layer","description":"A method for manufacturing a semiconductor device is disclosed. A semiconductor substrate such as bare silicon is provided, and a dielectric layer is formed over the semiconductor substrate. An openin","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8519541","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8519541","citation_suggestion":"Patentable. \"Semiconductor device having plural conductive layers disposed within dielectric layer\" (US-8519541). https://patentable.app/patents/US-8519541","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8519541","json":"https://patentable.app/api/llm-context/US-8519541","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T17:36:41.340Z"}