{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8519542","patent":{"patent_number":"US-8519542","title":"Air through-silicon via structure","assignee":null,"inventors":[],"filing_date":"2010-08-03T00:00:00.000Z","publication_date":"2013-08-27T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":13,"abstract":"A silicon substrate has a conductive via extending from a first surface of the silicon substrate through the silicon substrate to a second surface of the silicon substrate. A dielectric via extends from the second surface of the silicon substrate toward the first surface of the silicon substrate."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Air through-silicon via structure","description":"A silicon substrate has a conductive via extending from a first surface of the silicon substrate through the silicon substrate to a second surface of the silicon substrate. A dielectric via extends fr","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8519542","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8519542","citation_suggestion":"Patentable. \"Air through-silicon via structure\" (US-8519542). https://patentable.app/patents/US-8519542","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8519542","json":"https://patentable.app/api/llm-context/US-8519542","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T09:22:19.339Z"}