{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8519548","patent":{"patent_number":"US-8519548","title":"Wafer level packaged GaN power device and the manufacturing method thereof","assignee":null,"inventors":[],"filing_date":"2011-07-19T00:00:00.000Z","publication_date":"2013-08-27T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":7,"abstract":"Disclosed are a GaN-based compound power semiconductor device and a manufacturing method thereof, in which on a GaN power semiconductor element, a contact pad is formed for flip-chip bonding, and a bonding pad of a module substrate to be mounted with the GaN power semiconductor element is formed with a bump so as to modularize an individual semiconductor element. In the disclosed GaN-based compound power semiconductor device, an AlGaN HEMT element is flip-chip bonded to the substrate, so that heat generated from the element can be efficiently radiated."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Wafer level packaged GaN power device and the manufacturing method thereof","description":"Disclosed are a GaN-based compound power semiconductor device and a manufacturing method thereof, in which on a GaN power semiconductor element, a contact pad is formed for flip-chip bonding, and a bo","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8519548","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8519548","citation_suggestion":"Patentable. \"Wafer level packaged GaN power device and the manufacturing method thereof\" (US-8519548). https://patentable.app/patents/US-8519548","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8519548","json":"https://patentable.app/api/llm-context/US-8519548","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T20:58:18.164Z"}